|Apple's A7 Processor Die Image|
The devil is in the details, however, and we have to do some measurements to see the difference.
Below is a SEM image of a cross-section of a group of transistors in the A6 (APL0598) chip, fabbed in the Samsung 32-nm high-k-metal gate (HKMG) process. For convenience we have measured ten, so the dimension of the contacted gate pitch is 123 nm.
|SEM Cross-Section of Apple A6 (APL0598) Die|
|SEM Cross-Section of Apple A7 (APL0698) Die|
Below is a delayered sample of the A7, but we have yet to identify what that functionality is, something that we will be doing in the next few weeks.
|Transistor-Level Image of the Apple A7|